p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 362-365

  Zhang, Z Z ^a   Wei, Z P ^a   Lu, Y M ^a   Shen, D Z ^a   Yao, B ^a   Li, B H ^a   Zhao, D X ^a   Zhang, J Y ^a   Fan, X W ^a   Tang, Z K ^b  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting II VI materials; B3. Light emitting diodes

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL ACTIVATION; DECOMPOSITION; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; SAPPHIRE; ZINC OXIDE;

ELECTRICAL MEASUREMENTS; EMISSION SPECTRAS; GROWTH PARAMETERS; OXYGEN SOURCE;

LIGHT EMITTING DIODES;

EID: 33947326104     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.051     Document Type: Article

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