Effects of rapid thermal annealing on the structural and electrical properties of Na-doped ZnMgO lms

Applied Surface Science

Volumn 257, Issue 14, 2011, Pages 5927-5930

  Xue, Ya ^a   He, Haiping ^a   Jin, Yizheng ^a   Ye, Zhizhen ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Na doped ZnMgO; Pulsed laser deposition; Rapid thermal annealing

Indexed keywords

HALL MOBILITY; HOLE CONCENTRATION; HOLE MOBILITY; MAGNESIUM COMPOUNDS; OHMIC CONTACTS; PULSED LASER DEPOSITION; PULSED LASERS; SODIUM COMPOUNDS; X RAY DIFFRACTION; ZINC COMPOUNDS;

ANNEALING TEMPERATURES; FABRICATION PROCESS; HALL EFFECT MEASUREMENT; LIGHT EMITTING DIODE (LEDS); RAPID THERMAL ANNEALING (RTA); ROOM-TEMPERATURE PHOTOLUMINESCENCE; STRUCTURAL AND ELECTRICAL PROPERTIES; ZNMGO;

RAPID THERMAL ANNEALING;

EID: 79953029738     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.01.048     Document Type: Article

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