Electrical characterization of p-ZnO/p-Si heterojunction

Applied Surface Science

Volumn 255, Issue 12, 2009, Pages 6141-6144

  Majumdar, S ^a   Chattopadhyay, S ^a   Banerji, P ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Heterojunction; p Type conduction; Pulsed laser deposition; ZnO

Indexed keywords

CAPACITANCE; DOPING (ADDITIVES); HETEROJUNCTIONS; II-VI SEMICONDUCTORS; LATTICE MISMATCH; NITROGEN; PULSED LASER DEPOSITION; PULSED LASERS; UREA; ZINC OXIDE;

CAPACITANCE VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERIZATION; MINORITY CARRIER INJECTION; NEGATIVE POTENTIAL; P-TYPE CONDUCTION; STRUCTURAL AND ELECTRICAL PROPERTIES; THERMOIONIC EMISSIONS; ZNO/P-SI HETEROJUNCTIONS;

SILICON COMPOUNDS;

EID: 62349119946     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.01.067     Document Type: Article

References (20)

1. Zeng Y.-J., Ye Z.-Z., Xu W.-Z., Chen L.-L., Li D.-Y., Zhu L.-P., Zhao B.-H., and Hu Y.-L. J. Cryst. Growth 283 (2005) 180
2. Hsieh P.T., Chen Y.C., Kao K.S., and Wang C.M. Physica B: Condens. Matter 392 (2007) 332
3. Bangall D.M., Chen Y.F., Zhu Z., Yao T., Koyama S., Shen M.Y., and Goto T.J. Appl. Phys. 70 (1997) 2230
4. Xiong G., Wilkinson, Mischuch B., Tuezemen S., Ucer K.B., and Williams R.T. Appl. Phys. Lett. 80 (2002) 1195
5. Ma Y., Du G.T., Yang S.R., Li Z.T., Zhao B.J., Yang X.T., Yang T.P., Zhang Y.T., and Lu D.L. J. Appl. Phys. 95 (2004) 6268
6. Osinsky A., Dong J.W., Kauser M.Z., Hertog B., Dabiran A.M., Chow P.P., Pearton S.J., Lopatiuk O., and Chernyak L. Appl. Phys. Lett. 85 (2004) 4272
7. Hwang D.-K., Kang S.-H., Lim J.-H., Yang E.-J., Oh J.-Y., Yang J.-H., and Park S.-J. Appl. Phys. Lett. 86 (2005) 222101
8. Izaki M., Shinagawa T., Mizuno K.-T., Ida Y., Inaba M., and Tasaka A. J. Phys. D: Appl. Phys. 40 (2007) 3326
9. He J.H., Ho S.T., Wu T.B., Chen L.J., and Wang Z.L. Chem. Phys. Lett. 435 (2007) 119
10. Tansley T.L., and Owen S.J.T. J. Appl. Phys. 55 (1984) 454
11. Ma X., Chen P., Li D., and Young D. Solid State Phenom. 131 (2008) 625
12. Qi H., Li Q., Wang C., Zhang L., and Lv L. Vacuum 81 (2007) 943
13. Chen X.D., Ling C.C., Fung S., Beling C.D., Mei Y.F., Fu Ricky K.Y., Siu G.G., and Paul K.C. Appl. Phys. Lett. 88 (2006) 132104
14. Ye J.D., Gu S.L., Zhu S.M., Liu W., Liu S.M., Zhang R., Shi Y., and Zheng Y.D. Appl. Phys. Lett. 88 (2006) 182112
15. Gür E., Tüzemen S., Kiliç B., and Coskun C. J. Phys.: Condens. Matter 19 (2007) 196206
16. Zhang Y., Lin B., Fu Z., Liu C., and Han W. Opt. Mater. 28 (2006) 1192
17. Sze S.M. Physics of Semiconductor Devices (1985), John Wiley, New York
18. Nahm C.-W., and Park C.-H. J. Mater. Sci. 35 (2000) 3037
19. Adachi S. Hand Book on Physical Properties of Semiconductors, vol. 3, II-VI Compound Semiconductors (2004), Springer
20. Kevin F.B. The Physics of Semiconductors with Application to Optoelectronics Devices (1999), Cambridge University Press