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Volumn 49, Issue 4 PART 1, 2010, Pages 0411031-0411034

Study of structural and electrical properties of phosphorus-doped p-type ZnO thin films

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TREATMENTS; AS-DEPOSITED FILMS; HALL EFFECT MEASUREMENT; N-TYPE SEMICONDUCTORS; NITROGEN GAS; P TYPE ZNO THIN FILM; P-TYPE; PHOSPHORUS PENTOXIDE; PHOSPHORUS-DOPED; STRUCTURAL AND ELECTRICAL PROPERTIES;

EID: 77952641782     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.041103     Document Type: Article
Times cited : (2)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.