Co-doping effects and electrical transport in In-N doped zinc oxide

Chemical Physics Letters

Volumn 432, Issue 1-3, 2006, Pages 352-355

  Chen, L L ^a,b   Ye, Z Z ^a   Lu, J G ^a   He, H P ^a   Zhao, B H ^a   Zhu, L P ^a   Chu, Paul K ^b   Shao, L ^c  

^a ZHEJIANG UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CONCENTRATION (PROCESS); DOPING (ADDITIVES); HALL EFFECT; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIFFRACTION ANGLE; HALL MOBILITY; IMPURITY SCATTERING;

ZINC OXIDE;

EID: 33750964523     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2006.10.047     Document Type: Article

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