Realization of the intrinsic p-type ZnO thin film by SSCVD

Solid State Communications

Volumn 143, Issue 8-9, 2007, Pages 378-381

  Dai, L P ^a   Deng, H ^a   Chen, J J ^a   Wei, M ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

A. ZnO thin film; D. P type; D. Photoluminescence; E. Hall measurement

Indexed keywords

HALL MEASUREMENT; N-TYPE FILMS; ZINC VACANCIES;

CHEMICAL VAPOR DEPOSITION; HALL MOBILITY; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR JUNCTIONS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

THIN FILMS;

EID: 34547104602     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.06.021     Document Type: Article

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