Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO

Nature Materials

Volumn 2, Issue 10, 2003, Pages 673-677

  Sharma, Parmanand ^a   Gupta, Amita ^a   Rao, K V ^a   Owens, Frank J ^b   Sharma, Renu ^c   Ahuja, Rajeev ^d   Guillen, J M Osorio ^d   Johansson, Börje ^a,d   Gehring, G A ^e  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b Armament Research Development and Engineering Center   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

^d UPPSALA UNIVERSITY   (Sweden)

^e UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETISM; HIGH TEMPERATURE PROPERTIES; LOW TEMPERATURE EFFECTS; MAGNETIC MOMENTS; MANGANESE; SEMICONDUCTOR DOPING; THIN FILMS; ZINC OXIDE;

SPIN TRANSPORT PROPERTIES; SPINTRONIC DEVICES; VALENCE STATE;

MAGNETIC SEMICONDUCTORS;

EID: 0142059238     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat984     Document Type: Article

References (25)

1. Ohno, H. Making nonmagnetic semiconductors ferromagnetic. Science 281, 951-956 (1998).
2. Dietl, T., Ohno, H., Matsukura, F., Cibert, J. & Ferrand, D. Zener model description of ferromagnetic in zinc-blende magnetic semiconductors. Science 287, 1019-1022 (2000).
3. Matsumoto, Y. et al. Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide. Science 291, 854-856 (2001).
4. Ando, K. et al. Magneto-optical properties of ZnO-based dilute magnetic semiconductors. J. Appl. Phys. 89, 7784-7286 (2001).
5. Takamura, K., Matsukura, F., Chiba, D. & Hono, H. Magnetic properties of (Al,Ga,Mn) As. Appl. Phys. Lett. 81, 2590-2592 (2002).
6. Chambers, S. A. A potential role in spintronics. Mater. Today 34-39 (April 2002).
7. Ohno, H., Matsukura, F. & Ohno, Y. Semiconductor spin electronics. JSAP Int. 5, 4-13 (2002).
8. Nazmul, M., Ahsan, S. & Tanaka, M. High ferromagnetic transition temperature (∼172K) in Mn δ-toped GaAs with p-type selective doping. Cond-mat/0208299 (2003).
9. Ueda, K., Tabata, H. & Kawai, T. Magnetic and electric properties of transition-metal-doped ZnO films. J. Appl. Phys. 79, 988-990 (2001).
10. Thaler, G. et al. Magnetic properties of n-GaMnN thin films. Appl. Phys. Lett. 80, 3964-3966 (2002).
11. 2:Co thin films. J. Appl. Phys. 92, 7114-7121 (2002).
12. 2 anatase. Appl. Phys. Lett. 82, 1257-1259 (2003).
13. xO thin film by pulsed laser deposition. J. Appl. Phys. 92, 6066-6071 (2002).
14. Fukumura, T., Jin, Z., Ohtomo, A, Koinuma, H. & Kawasaki, M. An oxide-diluted magnetic semiconductor: Mn-doped ZnO. Appl. Phys. Lett. 75, 3366-3368 (1999).
15. Fukumura, T. et al. Magnetic properties of Mn-doped ZnO. Appl. Phys. Lett. 78, 958-960 (2001).
16. xO epitaxial thin films. Appl. Phys. Lett. 80, 4561-4563 (2002).
17. xO films. Solid State Commun. 121, 371-374 (2002).
18. Egerton, R. F. Electron Energy-Loss Spectroscopy in the Electron Microscope 370 (Plenum, New York and London, 1996).
19. Kurata, H. & Colliex, C. Electron energy-loss core-edge structure in manganese oxides. Phys. Rev. B 48, 2102-2108 (1993).
20. Kresse, G. & Hafner, J. Ab initio molecular dynamics for liquid metals. Phys. Rev. B 47, 558-561 (1993).
21. Kresse, G. & Hafner, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169-11186 (1996).
22. Blöchel, P. E. Projector augmented-wave method. Phys. Rev. B 30, 17953-17979 (1994).
23. Perdew, J. P. & Wang, Y. Accurate and simple analytic representation of the electron-gas correlation energy. Phys. Rev. B 45, 13244-13249 (1992).
24. Sato, K. & Katayama-Yoshida, H. First principles materials design for semiconductors spintronics. Semicond. Sci. Technol. 17, 367-376 (2002).
25. x)As. Phys. Rev. Lett. 88, 187202 (2002).