Influence of post-annealing temperature on properties of ZnO:Li thin films

Chemical Physics Letters

Volumn 420, Issue 4-6, 2006, Pages 358-361

  Chen, L L ^a   He, H P ^a   Ye, Z Z ^a   Zeng, Y J ^a   Lu, J G ^a   Zhao, B H ^a   Zhu, L P ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; HALL EFFECT; LITHIUM; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; ZINC OXIDE;

GLASS SUBSTRATES; POST-ANNEALING TEMPERATURE; VALENCE BAND;

THIN FILMS;

EID: 33644676336     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2005.12.071     Document Type: Article

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