As-doped p-type ZnO films grown on SiO 2 /Si by radio frequency magnetron sputtering

Applied Surface Science

Volumn 254, Issue 20, 2008, Pages 6358-6361

  Fan, J C ^a   Xie, Z ^a  

^a HUNAN UNIVERSITY   (China)

Author keywords

Arsenic dopant; Homojunction; p Type ZnO film; SiO 2 Si substrate

Indexed keywords

DOPING (ADDITIVES); HOLE CONCENTRATION; HOLE MOBILITY; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTOELECTRONIC DEVICES; SILICA; SUBSTRATES; ZINC OXIDE;

HALL MEASUREMENTS; HOMOJUNCTION; P-N HOMOJUNCTIONS; P-TYPE ZNO FILM; RADIO FREQUENCY MAGNETRON SPUTTERING; RECTIFYING BEHAVIORS; SIMPLE METHOD; STRUCTURAL AND ELECTRICAL PROPERTIES;

MAGNETRON SPUTTERING;

EID: 47549088077     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.03.193     Document Type: Article

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