Characterization of nitrogen-doped ZnO thin films grown by plasma-assisted pulsed laser deposition on sapphire substrates

Superlattices and Microstructures

Volumn 42, Issue 1-6, 2007, Pages 21-25

  Chakrabarti, S ^a   Doggett, B ^a   O'Haire, R ^a   McGlynn, E ^a   Henry, M O ^a   Meaney, A ^a   Mosnier, J P ^a  

^a DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

Hall mobility; Nitrogen doping; p type doping; Photoluminescence; Pulsed Laser Deposition; Zinc oxide; ZnO

Indexed keywords

DETERIORATION; ELECTRON CYCLOTRON RESONANCE; HALL EFFECT; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SAPPHIRE; ZINC OXIDE;

NITROGEN DOPING; P-TYPE DOPING; TEMPERATURE HOLE CONCENTRATIONS;

THIN FILMS;

EID: 34548489892     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.06.003     Document Type: Article

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