SCOPUS 정보 검색 플랫폼

Volumn 519, Issue 16, 2011, Pages 5558-5561

Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing

(5) Cheng, Yung Chen a Kuo, Ying Shen b Li, Yun Hsiu b Shyue, Jing Jong b,c Chen, Miin Jang b

a NATIONAL UNIVERSITY OF TAINAN (Taiwan)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

c RESEARCH CENTER FOR APPLIED SCIENCES (Taiwan)

Author keywords

Atomic layer deposition; Gallium arsenide substrates; p type Zinc oxide; Photoluminescence; Rapid thermal annealing; Thin films; X ray photoelectron spectroscopy

Indexed keywords

ARSENIC ATOM; BOUND EXCITON PEAKS; ELECTRON CONCENTRATION; GAAS; GAAS SUBSTRATES; GALLIUM ARSENIDE SUBSTRATES; INTENSITY ENHANCEMENT; LONG TERM STABILITY; LOW TEMPERATURE PHOTOLUMINESCENCE; OXYGEN AMBIENT; P TYPE ZNO; P-TYPE ZINC OXIDE; P-TYPE ZNO FILM; POST-DEPOSITION; SEMI-INSULATING GAAS; SPECTRAL PEAK; ZNO;

ARSENIC; ATOMIC LAYER DEPOSITION; ATOMS; GALLIUM ARSENIDE; HOLE CONCENTRATION; METALLIC FILMS; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING GALLIUM; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 79958012675 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.02.072 Document Type: Article

Times cited : (25)

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