P-type conducting ZnO: Fabrication and characterisation

Physica Status Solidi C: Conferences

Volumn 2, Issue 3, 2005, Pages 1119-1124

  Kaminska E ^a   Piotrowska, A ^a   Kossut, J ^a,b   Butkute, R ^b,c   Dobrowolski, W ^b   Lukasiewicz, R ^a   Barcz, A ^a,b   Jakiela R ^b   Dynowska, E ^b   Przezdziecka E ^b   Aleszkiewicz, M ^b   Wojnar, P ^b   Kowalczyk, E ^a  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

^c CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; EXCITONS; NITROGEN; SPUTTER DEPOSITION; THERMOOXIDATION; ZINC OXIDE;

NEUTRAL ACCEPTOR; P-TYPE CONDUCTIVITY; TRANSPARENT ELECTRONICS;

SYNTHESIS (CHEMICAL);

EID: 21044448150     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460659     Document Type: Conference Paper

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