P type doping of zinc oxide by arsenic ion implantation

Applied Physics Letters

Volumn 87, Issue 19, 2005, Pages 1-3

  Braunstein, G ^a   Muraviev, A ^a   Saxena, H ^a   Dhere, N ^b   Richter, V ^c   Kalish, R ^c  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

^c TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EX SITU ANNEALING; HOLE CONCENTRATION; IN SITU HEATING; LIQUID-NITROGEN TEMPERATURE;

ANNEALING; ARSENIC; CARRIER CONCENTRATION; HOLE MOBILITY; ION IMPLANTATION; POLYCRYSTALLINE MATERIALS; THIN FILMS; ZINC OXIDE;

DOPING (ADDITIVES);

EID: 27644510488     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2128064     Document Type: Article

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