P-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p-n homojunctions

Journal of Crystal Growth

Volumn 283, Issue 3-4, 2005, Pages 413-417

  Lu, J G ^a   Zhu, L P ^a   Ye, Z Z ^a   Zhuge, F ^a   Zhao, B H ^a   Huang, J Y ^a   Wang, L ^a   Yuan, J ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A1. Doping; A1. p type conduction; A3. DC reactive magnetron sputtering; B1. Oxides; B2. Semiconducting II VI materials; B3. p n homojunctions

Indexed keywords

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); HETEROJUNCTIONS; MAGNETRON SPUTTERING; NITROGEN; OXIDES; SEMICONDUCTOR MATERIALS; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

DC REACTIVE MAGNETRON SPUTTERING; P-N HOMOJUNCTIONS; P-TYPE CONDUCTION; SEMICONDUCTING III V MATERIALS;

ZINC OXIDE;

EID: 24644520315     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.05.079     Document Type: Article

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