Dopant source choice for formation of p -type ZnO: Li acceptor

Applied Physics Letters

Volumn 88, Issue 6, 2006, Pages

  Zeng, Y J ^a   Ye, Z Z ^a   Xu, W Z ^a   Li, D Y ^a   Lu, J G ^a   Zhu, L P ^a   Zhao, B H ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DC REACTIVE MAGNETRON SPUTTERING; HALL MOBILITY; HOLE CONCENTRATION;

HALL EFFECT; MAGNETRON SPUTTERING; OPTIMIZATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; ZINC OXIDE;

THIN FILMS;

EID: 32444436988     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2172743     Document Type: Article

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