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Volumn 110, Issue 10, 2011, Pages

Effect of (O, As) dual implantation on p-type doping of ZnO films

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERISTIC; FLUENCES; I - V CURVE; OXYGEN VACANCY CONCENTRATION; P-N JUNCTION; P-TYPE; P-TYPE DOPING; P-TYPE ZNO FILM; RF-SPUTTERING; ROOM TEMPERATURE; SI(1 0 0); ZNO; ZNO FILMS;

EID: 82555204708     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3662908     Document Type: Conference Paper
Times cited : (9)

References (29)
  • 14
    • 0043269843 scopus 로고    scopus 로고
    • 10.1103/PhysRevLett.90.256401
    • L. G. Wang and A. Zunger, Phys. Rev. Lett. 90, 256401 (2003). 10.1103/PhysRevLett.90.256401
    • (2003) Phys. Rev. Lett. , vol.90 , pp. 256401
    • Wang, L.G.1    Zunger, A.2
  • 27
    • 28344448489 scopus 로고    scopus 로고
    • Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition
    • DOI 10.1063/1.2056576, 122103
    • M.-S. Oh, S.-H. Kim, and T.-Y. Seong, Appl. Phys. Lett. 87, 122103 (2005). 10.1063/1.2056576 (Pubitemid 41717370)
    • (2005) Applied Physics Letters , vol.87 , Issue.12 , pp. 1-3
    • Oh, M.-S.1    Kim, S.-H.2    Seong, T.-Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.