Moisture sensitivity of p-ZnO/n-Si heterostructure

Sensors and Actuators, B: Chemical

Volumn 140, Issue 1, 2009, Pages 134-138

  Majumdar, Sayanee ^a   Banerji, P ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Heterojunction; Moisture sensor; Semiconductor; ZnO

Indexed keywords

CRYSTALLINITY; HETEROSTRUCTURE; LINEAR VARIATION; MOISTURE SENSING; MOISTURE SENSITIVITY; MOISTURE SENSOR; NITROGEN SOURCES; NITROGEN-DOPED; P-TYPE CONDUCTIVITY; RECOVERY TIME; RELATIVE HUMIDITIES; SCANNING ELECTRON MICROSCOPES; SEMICONDUCTOR; SI SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPE; X RAY DIFFRACTOMETERS; ZNO;

ATMOSPHERIC HUMIDITY; ATMOSPHERIC TEMPERATURE; CURRENT VOLTAGE CHARACTERISTICS; HOLE CONCENTRATION; MICROSCOPES; MOISTURE CONTROL; MOISTURE METERS; NITROGEN; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SENSORS; SILICON; THIN FILM DEVICES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; UREA; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 67349116031     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2009.03.053     Document Type: Article

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