Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition

Applied Physics Letters

Volumn 83, Issue 1, 2003, Pages 87-89

  Ryu, Y R ^a   Lee, T S ^a   White, H W ^b  

^a MOXtronics Inc   (United States)

^b UNIVERSITY OF MISSOURI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DOPING (ADDITIVES); EXCITONS; PHOTOLUMINESCENCE; ZINC OXIDE;

FREE EXCITON PEAKS (FX);

FILM GROWTH;

EID: 0042842374     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1590423     Document Type: Article

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