The microstructures and the electrical and optical properties of ZnO:N films prepared by thermal oxidation of Zn3 N2 precursor

Solid State Communications

Volumn 149, Issue 45-46, 2009, Pages 2085-2089

  Zou, C W ^a   Chen, R Q ^a   Gao, W ^a  

^a UNIVERSITY OF AUCKLAND   (New Zealand)

Author keywords

A. p type ZnO; A. Zn3N2 film; D. Photoluminescence; E. Thermal oxidation

Indexed keywords

A. P-TYPE ZNO; A. ZN3N2 FILM; ANNEALING TEMPERATURES; D. PHOTOLUMINESCENCE; DOPING EFFICIENCY; DOPING MECHANISM; E. THERMAL OXIDATION; ELECTRICAL AND OPTICAL PROPERTIES; GLASS SUBSTRATES; OXYGEN FLUXES; P TYPE ZNO; P-TYPE; PHOTOLUMINESCENCE PROPERTIES; REACTIVE MAGNETRON SPUTTERING; THERMAL OXIDATION; WORKING GAS; ZNO;

ANNEALING; ELECTRIC PROPERTIES; FILM PREPARATION; METALLIC FILMS; MICROSTRUCTURE; OXIDATION; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 70349755622     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.08.011     Document Type: Article

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