Fabrication of high hole-carrier density p-type ZnO thin films by N-Al co-doping

Applied Surface Science

Volumn 253, Issue 8, 2007, Pages 3825-3827

  Xiaodan, Zhang ^a   Hongbing, Fan ^a,b   Ying, Zhao ^a   Jian, Sun ^a   Changchun, Wei ^a   Cunshan, Zhang ^b  

^a NANKAI UNIVERSITY   (China)

^b HEBEI UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

N Al co doping; p Type conduction; Ultrasonic spray pyrolysis; ZnO

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; HALL EFFECT; PYROLYSIS; ZINC OXIDE;

N-AL CO-DOPING; P-TYPE CONDUCTION; ULTRASONIC SPRAY PYROLYSIS;

THIN FILMS;

EID: 33846633242     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.08.010     Document Type: Article

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