Impurity effects in ZnO and nitrogen-doped ZnO thin films fabricated by MOCVD

Journal of Crystal Growth

Volumn 287, Issue 1, 2006, Pages 94-100

  Li, Xiaonan ^a   Asher, Sally E ^a   Limpijumnong, Sukit ^b   Keyes, Brian M ^a   Perkins, Craig L ^a   Barnes, Teresa M ^a   Moutinho, Helio R ^a   Luther, Joseph M ^a   Zhang, S B ^a   Wei, Su Huai ^a   Coutts, Timothy J ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b SURANAREE UNIVERSITY OF TECHNOLOGY   (Thailand)

Author keywords

A1. Impurities; A3. Doping chemical vapor deposition processes; B1. Oxide; B2. Semiconducting II VI materials

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; NITROGEN OXIDES; PASSIVATION; THIN FILMS;

BULK IMPURITY; DOPING CHEMICAL VAPOR DEPOSITION PROCESS; NITROGEN DOPING; SEMICONDUCTING II-VI MATERIALS;

ZINC OXIDE;

EID: 29944446781     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.050     Document Type: Article

References (39)

1. C.R. Goria, N.W. Emanetoglu, S. Liang, W.E. Mayo, Y. Lu, M. Wraback, and H. Shen J. Appl. Phys. 85 1999 2595
2. J. Hu, and R.G. Gordon Solar Cells 30 1991 437
3. K. Minegishi, Y. Koiwai, Y. Kikuchi, K. Yano, M. Kasuga, and A. Shimizu Jpn J. Appl. Phys. 36 1997 L1453
4. M. Joseph, H. Tabata, and T. Kawai Jpn J. Appl. Phys. 38 1999 L1205
5. Y.R. Ryu, S. Zhu, D.C. Look, J.M. Wrobel, H.M. Jeong, and H.W. White J. Crystal Growth 216 2000 330
6. X. Li, Y. Yan, T.A. Gessert, C. Dehart, C.L. Perkins, D. Young, and T.J. Coutts Electrochem. Solid State 6 2003 C56
7. X.-L. Guo, H. Tabata, and T. Kawai J. Crystal Growth 223 2001 135
8. T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka Phys. Stat. Sol. B 229 2002 911
9. A.B.M.A. Ashrafi, I. Suemune, H. Kumano, and S. Tanaka Jpn J. Appl. Phys. 41 2002 L1281
10. J.F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing Appl. Phys. Lett. 83 2003 287
11. T.M. Barnes, K. Olson, and C.A. Wolden Appl. Phys. Lett. 86 2005 112112
12. C.L. Perkins, S.-H. Lee, X. Li, S.E. Asher, and T.J. Coutts J. Appl. Phys. 97 2005 034907
13. K.-K. Kim, H.-S. Kim, D.-K. Hwang, J.-H. Lim, and S.-J. Park Appl. Phys. Lett. 83 2003 63
14. G.D. Yuan, Z.Z. Ye, L.P. Zhu, Q. Qian, B.H. Zhao, R.X. Fan, C.L. Perkins, and S.B. Zhang Appl. Phys. Lett. 86 2005 202106
15. K. Nakahara, H. Takasu, P. Fon, A. Yamada, K. Iwata, K. Matsubara, R. Hunger, and S. Niki J. Crystal Growth 237-239 2002 503
16. J.M. Bian, X.M. Li, X.D. Gao, W.D. Yu, and L.D. Chen Appl. Phys. Lett. 84 2004 541
17. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S.F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki Nat. Mater. 4 2005 42
18. B.S. Li, Y.C. Liu, Z.Z. Zhi, D.Z. Shen, Y.M. Lu, J.Y. Zhang, X.W. Fan, R.X. Mu, and D.O. Henderson J. Mater. Res. 18 2003 8
19. B.M. Keyes, L.M. Gedvilas, X. Li, T.J. Coutts, J. Crystal Growth (2005) (in press)
20. S.B. Zhang, and J.E. Northrup Phys. Rev. Lett. 67 1991 2339
21. S. Limpijumnong, S.B. Zhang, S.-H. Wei, and C.H. Park Phys. Rev. Lett. 92 2004 155504
22. S.-H. Wei, and S.B. Zhang Phys. Rev. B 66 2002 155211
23. X. Li, Y. Yan, T.A. Gessert, C.L. Perkins, D. Young, C. Dehart, and T.J. Coutts J. Vac. Sci. Technol. A 21 2003 1342
24. E. Kaminska, A. Piotrowska, J. Kossut, R. Butkute, W. Dobrowolski, R. Łukasiewicz, A. Barcz, R. Jakieła, E. Dynowska, E. Przezdziecka, M. Aleszkiewicz, P. Wojnar, and E. Kowalczyk Phys. Stat. Sol. C 2 2005 1119
25. N.H. Nickel, and K. Fleischer Phys. Rev. Lett. 90 2003 197402
26. C.G. Van de Walle Phys. Rev. Lett. 85 2000 1012
27. S. Limpijumnong, X. Li, S.B. Zhang, and S.-H. Wei Appl. Phys. Lett. 86 2005 211910
28. G.-C. Yi, and B.W. Wessels Appl. Phys. Letts. 70 1997 357
29. X. Li, B.M. Keyes, S.E. Asher, S.B. Zhang, S.-H. Wei, T.J. Coutts, S. Limpijumnong, and C.G. Van de Walle Appl. Phys. Lett. 86 2005 122107
30. J. Ye, S. Gu, S. Zhu, S. Liu, W. Liu, X. Zhou, L. Hu, R. Zhang, Y. Shi, and Y. Zheng J. Crystal Growth 274 2005 489
31. H. Dumont, A. Marbeuf, J.-E. Bouree, and O. Gorochov J. Mater. Chem. 3 10 1993 1075
32. W. Tsang, and R.F. Hampson J. Phys. Chem. Ref. Data 15 3 1986 1087
33. D.L. Baulch, C.J. Cobos, R.A. Cox, P. Frank, G. Hayman, T. Just, J.A. Kerr, T. Murrels, M.J. Pilling, J. Troe, R.W. Walker, and J. Warnatz J. Phys. Chem. Ref. Data 23 1994 847
34. G. Parakevopoulos, and C.A. Winkler J. Phys. Chem. 71 1967 947
35. L.J. Stief, F.L. Nesbitt, W.A. Payne, S.C. Kuo, W. Tao, and R.B. Klemm J. Chem. Phys. 102 1995 5309
36. G. Pratt, and I. Veltman J. Chem. Soc. Faraday Trans. 72 1976 2477
37. C.G. Van de Walle Phys. Stat. Sol. B 229 2002 221
38. A. Janotti, S.B. Zhang, and S.-H. Wei Phys. Rev. Lett. 88 2002 125506
39. S. Limpijumnong, J.E. Northrup, and C.G. Van de Walle Phys. Rev. B 68 2003 075206