Stable p-type doping of ZnO film in aqueous solution at low temperatures

Journal of Physical Chemistry C

Volumn 114, Issue 21, 2010, Pages 9981-9987

  Tay, Chuan Beng ^a   Chua, Soo Jin ^a   Loh, Kian Ping ^a  

^a Department of Electrical and Computer Engineering ^*  (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS SOLUTIONS; DEFECT-RELATED EMISSION; DEVICE FABRICATIONS; FILM COVERAGE; GROWTH STRATEGY; HALL EFFECT MEASUREMENT; HYDROGEN DEFECTS; HYDROGEN DONOR; IV CHARACTERISTICS; LOW GROWTH TEMPERATURE; LOW TEMPERATURES; NATIVE DEFECT; P-TYPE CONDUCTIVITY; P-TYPE DOPING; PHOTOLUMINESCENCE MEASUREMENTS; UV BANDS; WIDE BAND-GAP MATERIAL; ZNO; ZNO FILMS;

DEFECT DENSITY; DEFECTS; DISTILLATION; DOPING (ADDITIVES); GALLIUM NITRIDE; HALL EFFECT; MAGNETIC FIELD EFFECTS; METALLIC FILMS; OPTICAL PROPERTIES; POTASSIUM; SECONDARY ION MASS SPECTROMETRY; STRATEGIC PLANNING; SURFACE ACTIVE AGENTS; ZINC; ZINC OXIDE;

FILM GROWTH;

EID: 77952977259     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp101039s     Document Type: Article

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