Control of N/N2 species ratio in NO plasma for p-type doping of ZnO

Journal of Applied Physics

Volumn 110, Issue 5, 2011, Pages

  Chen, Xingyou ^a,b   Zhang, Zhenzhong ^a   Yao, Bin ^c   Jiang, Mingming ^a   Wang, Shuangpeng ^a   Li, Binghui ^a   Shan, Chongxin ^a   Liu, Lei ^a   Zhao, Dongxu ^a   Shen, Dezhen ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE; CRYSTAL QUALITIES; HALL EFFECT MEASUREMENT; NITROGEN-DOPED; OPTICAL EMISSION SPECTRA; OXYGEN SOURCES; P-TYPE; P-TYPE DOPING; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; X-RAY DIFFRACTION MEASUREMENTS; ZNO; ZNO FILMS; ZNO THIN FILM;

ATOMIC SPECTROSCOPY; EMISSION SPECTROSCOPY; HALL EFFECT; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR OXYGEN; NITRIC OXIDE; OXIDE FILMS; PLASMAS; SAPPHIRE; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 80052920659     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3626069     Document Type: Conference Paper

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