Fabrication and post-anneal activation of p-type ZnMgO:Li film using dc reactive magnetron sputtering

Materials Letters

Volumn 62, Issue 17-18, 2008, Pages 2554-2556

  Chen, Lingxiang ^a   Ye, Zhizhen ^a   Lin, Shisheng ^a   He, Haiping ^a   Zeng, Yujia ^a   Zhao, Binghui ^a   Zhu, Liping ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Li doped; P type; Semiconductors; Thin films; ZnMgO

Indexed keywords

CARRIER CONCENTRATION; COMPLEXATION; LITHIUM; MAGNETRON SPUTTERING; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; ZINC COMPOUNDS;

DC REACTIVE MAGNETRON SPUTTERING; THERMAL ANNEAL PROCESS;

THIN FILMS;

EID: 43049174594     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2007.12.046     Document Type: Article

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