SCOPUS 정보 검색 플랫폼

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 286-288

Deep-level defects study of arsenic-implanted ZnO single crystal

(5) Zhu, C Y a Ling, C C a Brauer, G b Anwand, W b Skorupa, W b

a UNIVERSITY OF HONG KONG (Hong Kong)

b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

Author keywords

As implantation; P type doping; ZnO

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DISTILLATION; DOPING (ADDITIVES); SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; ZINC; ZINC OXIDE;

AS-IMPLANTATION; DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); DEEP-LEVEL DEFECTS; FLUENCE; P-TYPE DOPING; PRE TREATMENTS; RECTIFYING PROPERTIES; ROOM-TEMPERATURE (RT); SCHOTTKY CONTACTS; ZNO; ZNO SINGLE CRYSTALS;

ARSENIC;

EID: 58749097797 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/j.mejo.2008.07.037 Document Type: Article

Times cited : (11)

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