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Physical Review Letters

Volumn 86, Issue 25, 2001, Pages 5723-5726

Control of doping by impurity chemical potentials: Predictions for p-type Zno

(3) Yan, Yanfa a Zhang, S B a Pantelides, S T b,c

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

b VANDERBILT UNIVERSITY (United States)

c OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL BONDS; CONDUCTIVE FILMS; DEFECTS; ELECTRON CYCLOTRON RESONANCE; FERMI LEVEL; IMPURITIES; NITROGEN OXIDES; REACTION KINETICS; THERMODYNAMICS; ZINC OXIDE;

CHEMICAL POTENTIALS;

SEMICONDUCTOR DOPING;

EID: 0035907738 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.86.5723 Document Type: Article

Times cited : (416)

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