Fabrication and characteristics of the low-resistive p-type ZnO thin films by DC reactive magnetron sputtering

Materials Letters

Volumn 60, Issue 7, 2006, Pages 912-914

  Wang, Chao ^a   Ji, Zhenguo ^a   Xi, Junhua ^a   Du, Juan ^a   Ye, Zhizhen ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Heat treatment; Magnetron sputtering; P type ZnO; Thin films

Indexed keywords

ANNEALING; HEAT TREATMENT; SPUTTERING; SUBSTRATES; THIN FILMS; ZINC ALLOYS;

ANNEALING TREATMENT; GLASS SUBSTRATES; P-TYPE ZNO; SPUTTERING TARGET;

MAGNETRON SPUTTERING;

EID: 29444435255     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2005.10.057     Document Type: Article

References (18)

1. Y. Yodhino, T. Makino, Y. Katayama, and T. Hata Vacuum 59 2-3 2000 538
2. B.B. Rao Mater. Chem. Phys. 64 1 2000 62
3. C.M. Lampert Sol. Energy Mater. 6 1986 1
4. B. Sang, K. Dairiki, A. Yamada, and M. Konagai Jpn. J. Appl. Phys. 38 1999 4983
5. G.S. Kino, and R.S. Wagner J. Appl. Phys. 44 1973 1480
6. A. Maldonado, M.L. dela Olvera, R. Asomoza, and S. Tirado Guerraj J. Vac. Sci. Technol., A 18 2000 2098
7. H.J. Michel, H. Leiste, K.D. Schierbaum, and J. Halbritter Appl. Surf. Sci. 126 1998 57
8. Y.P. Wang, W.I. Lee, and T.-Y. Tseng Appl. Phys. Lett. 69 1996 1807
9. A. Iga Met. Powder Rep. 54 4 1999 37
10. J.W. Cook, and F. Schetzina J. Electron. Mater. 25 1996 855
11. S. Choopun, R.D. Vispute, W. Noch, A. Balasamo, R.P. Sharma, T. Venkatesan, A. Lliadies, and D.C. Look Appl. Phys. Lett. 75 1999 3947
12. Xin-Li Guo, Hitoshi Tabata, and Tomoji Kawai J. Cryst. Growth 223 2001 239
13. M. Joseph, H. Tabata, H. Saeki, K. Ueda, and T. Kawai Phys., B 140 2001 302
14. Zhenguo Ji, Chengxing Yang, Kun Liu, and Zhizheng Ye J. Cryst. Growth 253 2003 239
15. Chao Wang, Zhengguo Ji, Kun Liu, Yin Xiang, and Zhizheng Ye J. Cryst. Growth 259 2003 279
16. Y. Sato, and S. Sato Thin Solid Films 281-282 1996 445
17. M. Futsuhara, K. Yoshioka, and O. Takai Thin Solid Films 317 1998 322
18. Jianguo Lu, Zhizhen Ye, Lei Wang, Jingyun Huang, and Binghui Zhao Mater. Sci. Semicond. Process. 5 2003 491 496