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Applied Physics Letters

Volumn 85, Issue 22, 2004, Pages 5269-5271

As-doped p-type ZnO produced by an evaporation/sputtering process

(4) Look, D C a,b Renlund, G M c Burgener II, R H c Sizelove, J R a

a AIR FORCE RESEARCH LABORATORY (United States)

b WRIGHT STATE UNIVERSITY (United States)

c ON International Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC VALUES; ELECTRICAL ACTIVITY; IONIC RADIUS; RADIATION RESISTANCE;

CARRIER MOBILITY; CURVE FITTING; DOPING (ADDITIVES); EVAPORATION; SPECTROSCOPY; SPUTTERING; SUBSTRATES;

ZINC OXIDE;

EID: 11044222901 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1825615 Document Type: Article

Times cited : (293)

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