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Applied Physics A: Materials Science and Processing

Volumn 97, Issue 3, 2009, Pages 689-692

Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p-n homojunction structure

(5) Kumar, Manoj a Kar, Jyoti Prakash a Kim, In Soo a Choi, Se Young a Myoung, Jae Min a

a Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR BOUND EXCITON; AS-GROWN; BONDING STATE; DONOR-ACCEPTORS; E BEAM EVAPORATION; HOMOJUNCTION; LOW TEMPERATURE PHOTOLUMINESCENCE; N-TYPE CONDUCTIVITY; P TYPE ZNO; P TYPE ZNO THIN FILM; P-N DIODE; P-N HOMOJUNCTIONS; P-TYPE; P-TYPE CONDUCTION; SI(1 0 0); ZNO; ZNO NANOWIRES;

ARSENIC; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON WAFERS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 70450286257 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-009-5292-1 Document Type: Article

Times cited : (15)

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