Temperature-dependent electrical characterization of nitrogen-doped ZnO thin film: Vacuum annealing effect

Physica Scripta

Volumn 79, Issue 3, 2009, Pages

  Gür, Emre ^a   Tuzemen S ^a   Doan, S ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; AS-GROWN; BAND-TO-BAND RECOMBINATION; BEFORE AND AFTER; ELECTRICAL CHARACTERIZATION; ELECTRICAL PARAMETER; EXCITON RECOMBINATION; HALL EFFECT MEASUREMENT; HIGH MOBILITY; HIGH-TEMPERATURE ANNEALING; LOW RESISTIVITY; N-DOPED; NITROGEN-DOPED; P TYPE ZNO THIN FILM; PL MEASUREMENTS; REACTIVE SPUTTERING METHOD; SI SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TIME-RESOLVED PHOTOLUMINESCENCE; VACUUM-ANNEALING; X-RAY DIFFRACTION MEASUREMENTS; XRD; XRD MEASUREMENTS; ZNO FILMS;

ACTIVATION ENERGY; ANNEALING; BIOACTIVITY; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; METALLIC FILMS; OPTICAL FILMS; SEMICONDUCTING ZINC COMPOUNDS; THIN FILM DEVICES; THIN FILMS; VACUUM; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

CARRIER CONCENTRATION;

EID: 66149115655     PISSN: 00318949     EISSN: 14024896     Source Type: Journal    
DOI: 10.1088/0031-8949/79/03/035701     Document Type: Article

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