The activation energy of the nitrogen acceptor in p-type ZnO film grown by plasma-assisted molecular beam epitaxy

Solid State Communications

Volumn 140, Issue 7-8, 2006, Pages 345-348

  Sun, J W ^a,b   Lu, Y M ^a   Liu, Y C ^a,c   Shen, D Z ^a   Zhang, Z Z ^a   Li, B H ^a   Zhang, J Y ^a   Yao, B ^a   Zhao, D X ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

A. Semiconductors; B. Impurities in semiconductors; C. Optical properties; D. Hall effect measurement

Indexed keywords

HALL EFFECT MEASUREMENT; IMPURITIES IN SEMICONDUCTORS; NITROGEN ACCEPTORS; TEMPERATURE DEPENDENT;

ACTIVATION ENERGY; HALL EFFECT; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; THIN FILMS;

ZINC OXIDE;

EID: 33749523565     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.09.007     Document Type: Article

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