Identification of acceptor states in Li-N dual-doped p-type ZnO thin films

Chinese Physics Letters

Volumn 26, Issue 4, 2009, Pages

  Zhang, Yin Zhu ^a   Lu, Jian Guo ^a   Ye, Zhi Zhen ^a   He, Hai Ping ^a   Chen, Lan Lan ^b   Zhao, Bing Hui ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; LITHIUM COMPOUNDS; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; SEMICONDUCTING FILMS; THIN FILMS; ZINC OXIDE;

ACCEPTOR STATE; ACCEPTOR-BOUND EXCITONS; DUAL DOPED; N-O COMPLEXES; NEUTRAL ACCEPTORS; P-TYPE; PULSED-LASER DEPOSITION; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THIN-FILMS; ZNO THIN FILM;

II-VI SEMICONDUCTORS;

EID: 68449088767     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/26/4/046103     Document Type: Article

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