Control of structure, conduction behavior, and band gap of Zn 1-xMgxO films by nitrogen partial pressure ratio of sputtering gases

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Cong, C X ^b   Yao, B ^b   Xing, G Z ^b   Xie, Y P ^b   Guan, L X ^b   Li, B H ^a   Wang, X H ^a   Wei, Z P ^a   Zhang, Z Z ^a   Lv, Y M ^a   Shen, D Z ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; ELECTRIC PROPERTIES; MAGNESIUM PRINTING PLATES; MAGNETRON SPUTTERING; NITROGEN; PARTIAL PRESSURE; ZINC COMPOUNDS;

BAND GAP; RESISTIVITY; SPUTTERING GASES; WURTZITE PHASE;

THIN FILMS;

EID: 33846105926     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2424449     Document Type: Article

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