Electrochemical route to p-type doping of ZnO nanowires

Journal of Physical Chemistry Letters

Volumn 1, Issue 7, 2010, Pages 1090-1094

  Thomas, M A ^a   Cui, J B ^a  

^a University of Arkansas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AG/AGCL; APPLIED POTENTIALS; BAND GAP REDUCTION; BAND GAPS; CONDUCTIVITY CHANGES; CRITICAL VALUE; DONOR-BOUND EXCITON; DOPED ZNO; ELECTROCHEMICAL DEPOSITION; ELECTROCHEMICAL GROWTH; ELECTROCHEMICAL ROUTES; GROWTH CONDITIONS; LOW TEMPERATURES; P TYPE ZNO; P-TYPE; P-TYPE CONDUCTIVITY; P-TYPE DOPING; ZNO NANOWIRES;

DOPING (ADDITIVES); ENERGY GAP; EPITAXIAL GROWTH; NANOWIRES; REDUCTION; SILVER;

ZINC OXIDE;

EID: 77950579587     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz100246e     Document Type: Article

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