SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 518, Issue 16, 2010, Pages 4542-4545

Evidence of p-doping in ZnO films deposited on GaAs

(2) Nagar, S a Chakrabarti, S a

a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY (India)

Author keywords

II VI semiconductor; P doping; Wide bandgap; ZnO

Indexed keywords

AFM; ANNEALED SAMPLES; CRYSTALLINITIES; DOPED ZNO; GAAS; II-VI SEMICONDUCTOR; N-TYPE CONDUCTIVITY; P TYPE ZNO THIN FILM; P-DOPING; P-TYPE; SEMI-INSULATING GAAS; VAN DER PAUW HALL MEASUREMENTS; WIDE BAND GAP; XRD; ZNO; ZNO FILMS;

ATOMIC FORCE MICROSCOPY; AUTOMOBILE EXHIBITIONS; DEPOSITION; DOPING (ADDITIVES); ENERGY GAP; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALVANOMAGNETIC EFFECTS; GROUND STATE; HALL MOBILITY; HOLE CONCENTRATION; HOLE MOBILITY; METALLIC FILMS; PULSED LASER DEPOSITION; PULSED LASERS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; THIN FILMS; X RAY DIFFRACTION;

ZINC OXIDE;

EID: 77955604881 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2009.12.026 Document Type: Conference Paper

Times cited : (13)

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