SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 3950-3953

Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals

(7) Lee, Jong Hyun a Lee, Jun Seok a Cha, Seung Nam b Kim, Jong Min b Seo, Do Seok c Im, Won Bin c Hong, Jin Pyo a

a Hanyang University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c WONIL Image Maker INC (South Korea)

Author keywords

Aluminium nitride codoped; Homojunction; p type; ZnO

Indexed keywords

ACTIVATED NITROGENS; ALN; ALN FILMS; ALN THIN FILMS; ALUMINIUM-NITRIDE CODOPED; CO-DOPED ZNO; CO-SPUTTERING; ELECTRICAL PROPERTIES; HIGH DENSITIES; HIGH MOBILITIES; HOMOJUNCTION; P-TYPE; P-TYPE BEHAVIORS; P-TYPE ZNO; P-TYPE ZNO FILMS; RF-POWER; ZNO;

ALUMINUM; ELECTRIC PROPERTIES; HOLE CONCENTRATION; HOLE MOBILITY; METALLIC FILMS; NITRIDES; OXIDE MINERALS; PLASMAS; QUARTZ; SODIUM COMPOUNDS; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 65149103311 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2009.01.171 Document Type: Article

Times cited : (7)

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