New valence control and spin control method in GaN and AlN by codoping and transition atom doping

Journal of Crystal Growth

Volumn 231, Issue 3, 2001, Pages 428-436

  Katayama Yoshida, H ^a   Kato, R ^a   Yamamoto, T ^b  

^a OSAKA UNIVERSITY   (Japan)

^b KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

B2. Semiconducting aluminium compounds; B2. Semiconducting gallium compounds

Indexed keywords

ALUMINUM NITRIDE; ANTIFERROMAGNETIC MATERIALS; CARRIER MOBILITY; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

SPIN CONTROL METHODS; VALENCE CONTROL METHODS;

SEMICONDUCTOR DOPING;

EID: 0035480271     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01474-9     Document Type: Conference Paper

References (20)

1. High doped p-type GaN grown by newly developed alternative co-doping technique
2. 0.8N