SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 109, Issue 10, 2011, Pages

Determination of activation behavior in annealed Al-N codoped ZnO films

(5) Yao, Shiau Lu a Hong, Jhen Dong a Lee, Ching Ting b Ho, Chung Yen a Liu, Day Shan a

a NATIONAL FORMOSA UNIVERSITY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; ACTIVATION BEHAVIOR; ANNEALED SAMPLES; CO-DOPED ZNO; COSPUTTERING; DEEP LEVEL EMISSION; HALL EFFECT MEASUREMENT; HALL MEASUREMENTS; IMPURITIES IN; LOW TEMPERATURE PHOTOLUMINESCENCE; P-TYPE CONDUCTION; PHOTOLUMINESCENCE SPECTRUM; PL SPECTRA; RADIATION EMISSIONS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SHALLOW DONORS; TEMPERATURE DEPENDENT;

ACTIVATION ENERGY; ANNEALING; BINDING ENERGY; DEFECTS; DOPING (ADDITIVES); HOLE CONCENTRATION; METALLIC FILMS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; VACUUM; ZINC; ZINC OXIDE;

ALUMINUM;

EID: 79958777445 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3587164 Document Type: Conference Paper

Times cited : (29)

References (47)

1
- 33644670780
- Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection
- DOI 10.1063/1.2178470
- L. J. Mandalapu, Z. Yang, F. X. Xiu, D. T. Zhao, and J. L. Liu, Appl. Phys. Lett. 88, 092103 (2006). 10.1063/1.2178470 (Pubitemid 43334440)
- (2006) Applied Physics Letters , vol.88 , Issue.9 , pp. 092103
- Mandalapu, L.J.¹ Yang, Z.² Xiu, F.X.³ Zhao, D.T.⁴ Liu, J.L.⁵

2
- 44949142892
- 10.1002/adma.v20:5
- B. N. Pal, J. Sun, B. J. Jung, E. Choi, A. G. Andreou, and H. E. Katz, Adv. Mater. 20, 1023 (2008). 10.1002/adma.v20:5
- (2008) Adv. Mater. , vol.20 , pp. 1023
- Pal, B.N.¹ Sun, J.² Jung, B.J.³ Choi, E.⁴ Andreou, A.G.⁵ Katz, H.E.⁶

3
- 77957878473
- 10.1143/JJAP.49.085501
- B. T. Lai, C. T. Lee, J. D. Hong, S. L. Yao, and D. S. Liu, Jpn. J. Appl. Phys. 49, 085501 (2010). 10.1143/JJAP.49.085501
- (2010) Jpn. J. Appl. Phys. , vol.49 , pp. 085501
- Lai, B.T.¹ Lee, C.T.² Hong, J.D.³ Yao, S.L.⁴ Liu, D.S.⁵

4
- 2442614514
- 10.1109/JSEN.2003.817670
- A. Trinchi, K. Galatsis, W. Wlodarski, and Y. X. Li, IEEE Sens. J. 3, 548 (2003). 10.1109/JSEN.2003.817670
- (2003) IEEE Sens. J. , vol.3 , pp. 548
- Trinchi, A.¹ Galatsis, K.² Wlodarski, W.³ Li, Y.X.⁴

5
- 2342539699
- 10.1016/j.snb.2003.12.054
- J. M. Nel, F. D. Auret, L. Wu, M. J. Legodi, W. E. Meyer, and M. Hayes, Sens. Actuators B 100, 270 (2004). 10.1016/j.snb.2003.12.054
- (2004) Sens. Actuators B , vol.100 , pp. 270
- Nel, J.M.¹ Auret, F.D.² Wu, L.³ Legodi, M.J.⁴ Meyer, W.E.⁵ Hayes, M.⁶

6
- 32444436988
- Dopant source choice for formation of p -type ZnO: Li acceptor
- DOI 10.1063/1.2172743
- Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, and B. H. Zhao, Appl. Phys. Lett. 88, 062107 (2006). 10.1063/1.2172743 (Pubitemid 43228498)
- (2006) Applied Physics Letters , vol.88 , Issue.6 , pp. 062107
- Zeng, Y.J.¹ Ye, Z.Z.² Xu, W.Z.³ Li, D.Y.⁴ Lu, J.G.⁵ Zhu, L.P.⁶ Zhao, B.H.⁷

7
- 33645138287
- 10.1063/1.2186383
- V. Vaithianathan, B. T. Lee, C. H. Chang, K. Asokan, and S. S. Kim, Appl. Phys. Lett. 88, 112103 (2006). 10.1063/1.2186383
- (2006) Appl. Phys. Lett. , vol.88 , pp. 112103
- Vaithianathan, V.¹ Lee, B.T.² Chang, C.H.³ Asokan, K.⁴ Kim, S.S.⁵

8
- 33646145069
- 10.1063/1.2193798
- P. Wang, N. F. Chen, and Z. G. Yin, Appl. Phys. Lett. 88, 152102 (2006). 10.1063/1.2193798
- (2006) Appl. Phys. Lett. , vol.88 , pp. 152102
- Wang, P.¹ Chen, N.F.² Yin, Z.G.³

9
- 3042855138
- 10.1063/1.1763640
- C. C. Lin, S. Y. Chen, S. Y. Cheng, and H. Y. Lee, Appl. Phys. Lett. 84, 5040 (2004). 10.1063/1.1763640
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5040
- Lin, C.C.¹ Chen, S.Y.² Cheng, S.Y.³ Lee, H.Y.⁴

10
- 33646396516
- 10.1063/1.2198489
- Y. Nakano, T. Morikawa, T. Ohwaki, and Y. Taga, Appl. Phys. Lett. 88, 172103 (2006). 10.1063/1.2198489
- (2006) Appl. Phys. Lett. , vol.88 , pp. 172103
- Nakano, Y.¹ Morikawa, T.² Ohwaki, T.³ Taga, Y.⁴

11
- 33748877561
- Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magnetron sputtering
- DOI 10.1063/1.2337766
- M. L. Tu, Y. K. Su, and C. Y. Ma, J. Appl. Phys. 100, 053705 (2006). 10.1063/1.2337766 (Pubitemid 44422054)
- (2006) Journal of Applied Physics , vol.100 , Issue.5 , pp. 053705
- Tu, M.-L.¹ Su, Y.-K.² Chun-Yang, M.³

12
- 1242285028
- 10.1063/1.1644331
- J. M. Bian, X. M. Li, X. D. Gao, W. D. Yu, and L. D. Chen, Appl. Phys. Lett. 84, 541 (2004). 10.1063/1.1644331
- (2004) Appl. Phys. Lett. , vol.84 , pp. 541
- Bian, J.M.¹ Li, X.M.² Gao, X.D.³ Yu, W.D.⁴ Chen, L.D.⁵

13
- 21244438715
- Effects of Al content on properties of Al-N codoped ZnO films
- DOI 10.1016/j.apsusc.2004.11.073, PII S0169433204017428
- Y. J. Zeng, Z. Z. Ye, J. G. Lu, L. P. Zhu, D. Y. Li, B. H. Zhao, and J. Y. Huang, Appl. Surf. Sci. 249, 203 (2005). 10.1016/j.apsusc.2004.11.073 (Pubitemid 40893399)
- (2005) Applied Surface Science , vol.249 , Issue.1-4 , pp. 203-207
- Zeng, Y.-J.¹ Ye, Z.-Z.² Lu, J.-G.³ Zhu, L.-P.⁴ Li, D.-Y.⁵ Zhao, B.-H.⁶ Huang, J.-Y.⁷

14
- 33748709060
- Growth of epitaxial p-type ZnO thin films by codoping of Ga and N
- DOI 10.1063/1.2338527
- M. Kumar, T. H. Kim, S. S. Kim, and B. T. Lee, Appl. Phys. Lett. 89, 112103 (2006). 10.1063/1.2338527 (Pubitemid 44396574)
- (2006) Applied Physics Letters , vol.89 , Issue.11 , pp. 112103
- Kumar, M.¹ Kim, T.-H.² Kim, S.-S.³ Lee, B.-T.⁴

15
- 34548028748
- Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system
- DOI 10.1063/1.2768010
- D. S. Liu, C. S. Sheu, and C. T. Lee, J. Appl. Phys. 102, 033516 (2007). 10.1063/1.2768010 (Pubitemid 47283444)
- (2007) Journal of Applied Physics , vol.102 , Issue.3 , pp. 033516
- Liu, D.-S.¹ Sheu, C.-S.² Lee, C.-T.³

16
- 33744540243
- Carrier localization in codoped ZnO:N:Al films
- DOI 10.1016/j.ssc.2006.04.014, PII S0038109806003243
- H. P. He, Z. Z. Ye, F. Zhuge, Y. J. Zeng, L. P. Zhu, B. H. Zhao, J. Y. Huang, and Z. Chen, Solid State Commun. 138, 542 (2006). 10.1016/j.ssc.2006.04. 014 (Pubitemid 43816630)
- (2006) Solid State Communications , vol.138 , Issue.10-11 , pp. 542-545
- He, H.P.¹ Ye, Z.Z.² Zhuge, F.³ Zeng, Y.J.⁴ Zhu, L.P.⁵ Zhao, B.H.⁶ Huang, J.Y.⁷ Chen, Z.⁸

17
- 42649133863
- Comparative photoluminescence study on p-type and n-type ZnO films codoped by nitrogen and aluminium
- DOI 10.1016/j.optmat.2007.08.006, PII S0925346707002613
- H. Tang, Z. Ye, and H. He, Opt. Mater. 30, 1422 (2008). 10.1016/j.optmat.2007.08.006 (Pubitemid 351601627)
- (2008) Optical Materials , vol.30 , Issue.9 , pp. 1422-1426
- Tang, H.¹ Ye, Z.² He, H.³

18
- 68149089864
- 10.1557/jmr.2009.0265
- L. W. Lai, J. T. Yan, C. H. Chen, L. R. Lou, and C. T. Lee, J. Mater. Res. 24, 2252 (2009). 10.1557/jmr.2009.0265
- (2009) J. Mater. Res. , vol.24 , pp. 2252
- Lai, L.W.¹ Yan, J.T.² Chen, C.H.³ Lou, L.R.⁴ Lee, C.T.⁵

19
- 18144381986
- 10.1016/j.mss2004.07.006
- Y. Chen, Y. Pu, L. Wang, C. Mo, W. Fang, B. Xiong, and F. Jiang, Mater. Sci. Semicond. Process. 8, 491 (2005). 10.1016/j.mssp.2004.07.006
- (2005) Mater. Sci. Semicond. Process. , vol.8 , pp. 491
- Chen, Y.¹ Pu, Y.² Wang, L.³ Mo, C.⁴ Fang, W.⁵ Xiong, B.⁶ Jiang, F.⁷

20
- 26444557375
- Effect of thermal annealing treatment on structural, electrical and optical properties of transparent sol-gel ZnO thin films
- DOI 10.1016/j.materresbull.2005.06.010, PII S0025540805002321
- R. Ghosh, G. K. Paul, and D. Basak, Mater. Res. Bull. 40, 1905 (2005). 10.1016/j.materresbull.2005.06.010 (Pubitemid 41428326)
- (2005) Materials Research Bulletin , vol.40 , Issue.11 , pp. 1905-1914
- Ghosh, R.¹ Paul, G.K.² Basak, D.³

21
- 0035880962
- 10.1103/PhysRevB.64.085120
- E. C. Lee, Y. S. Kim, Y. G. Jin, and K. J. Chang, Phys. Rev. B 68, 085120 (2001). 10.1103/PhysRevB.64.085120
- (2001) Phys. Rev. B , vol.68 , pp. 085120
- Lee, E.C.¹ Kim, Y.S.² Jin, Y.G.³ Chang, K.J.⁴

22
- 0038436228
- Activation energies of Si donors in GaN
- DOI 10.1063/1.115805, PII S000369519603522X
- W. Gtz, N. M. Johnson, C. Chen, H. Liu, C. Kuo, and W. Imler, Appl. Phys. Lett. 68, 3144 (1996). 10.1063/1.115805 (Pubitemid 126684235)
- (1996) Applied Physics Letters , vol.68 , Issue.22 , pp. 3144-3146
- Gotz, W.¹ Johnson, N.M.² Chen, C.³ Liu, H.⁴ Kuo, C.⁵ Imler, W.⁶

23
- 54749122074
- 10.1063/1.2978374
- Z. Q. Fang, B. Claflin, D. C. Look, Y. F. Dong, H. L. Mosbacker, and L. J. Brillson, J. Appl. Phys. 104, 063707 (2008). 10.1063/1.2978374
- (2008) J. Appl. Phys. , vol.104 , pp. 063707
- Fang, Z.Q.¹ Claflin, B.² Look, D.C.³ Dong, Y.F.⁴ Mosbacker, H.L.⁵ Brillson, L.J.⁶

24
- 77955651391
- 10.1142/S0217984910024559
- L. B. Shi, J. W. Jin, and C. Y. Xu, Mod. Phys. Lett. B 24, 2171 (2010). 10.1142/S0217984910024559
- (2010) Mod. Phys. Lett. B , vol.24 , pp. 2171
- Shi, L.B.¹ Jin, J.W.² Xu, C.Y.³

25
- 77956413726
- 10.1116/1.3462031
- Z. P. Shan, S. L. Gu, K. P. Wu, S. M. Zhu, K. Tang, and Y. D. Zheng, J. Vac. Sci. Technol. A 28, 1115 (2010). 10.1116/1.3462031
- (2010) J. Vac. Sci. Technol. A , vol.28 , pp. 1115
- Shan, Z.P.¹ Gu, S.L.² Wu, K.P.³ Zhu, S.M.⁴ Tang, K.⁵ Zheng, Y.D.⁶

26
- 0010059052
- 10.1103/PhysRevB.63.075205
- S. B. Zhang, S. H. Wei, and A. Zunger, Phys. Rev. B 63, 075205 (2001). 10.1103/PhysRevB.63.075205
- (2001) Phys. Rev. B , vol.63 , pp. 075205
- Zhang, S.B.¹ Wei, S.H.² Zunger, A.³

27
- 4444358498
- 10.1002/pssa.v201:10
- D. C. Look, B. Claflin, Y. I. Alivov, and S. J. Park, Phys. Status Solidi A 201, 2203 (2004). 10.1002/pssa.v201:10
- (2004) Phys. Status Solidi A , vol.201 , pp. 2203
- Look, D.C.¹ Claflin, B.² Alivov, Y.I.³ Park, S.J.⁴

28
- 33646934074
- Defect-related vibrational and photoluminescence spectroscopy of a codoped ZnO : AAAl : NNN film
- DOI 10.1088/0022-3727/39/11/004, PII S0022372706191585
- H. He, F. Zhung, Z. Ye, L. Zhu, B. Zhao, and J. Huang, J. Phys. D: Appl. Phys. 39, 2339 (2006). 10.1088/0022-3727/39/11/004 (Pubitemid 43794343)
- (2006) Journal of Physics D: Applied Physics , vol.39 , Issue.11 , pp. 2339-2342
- He, H.¹ Zhuge, F.² Ye, Z.³ Zhu, L.⁴ Zhao, B.⁵ Huang, J.⁶

29
- 0035855080
- 10.1063/1.1394173
- B. Lin, Z. Fu, and Y. Jia, Appl. Phys. Lett. 79, 943 (2001). 10.1063/1.1394173
- (2001) Appl. Phys. Lett. , vol.79 , pp. 943
- Lin, B.¹ Fu, Z.² Jia, Y.³

30
- 0042341732
- 10.1063/1.1577819
- Y. G. Wang, S. P. Lau, H. W. Lee, S. F. Yu, B. K. Tay, X. H. Zhang, and H. H. Hng, J. Appl. Phys. 94, 354 (2003). 10.1063/1.1577819
- (2003) J. Appl. Phys. , vol.94 , pp. 354
- Wang, Y.G.¹ Lau, S.P.² Lee, H.W.³ Yu, S.F.⁴ Tay, B.K.⁵ Zhang, X.H.⁶ Hng, H.H.⁷

31
- 33751202980
- 2
- DOI 10.1016/j.physb.2006.05.346, PII S0921452606012531
- X. Q. Wei, B. Y. Man, M. Liu, C. S. Xue, H. Z. Zhuang, and C. Yang, Physica B 388, 145 (2007). 10.1016/j.physb.2006.05.346 (Pubitemid 44793066)
- (2007) Physica B: Condensed Matter , vol.388 , Issue.1-2 , pp. 145-152
- Wei, X.Q.¹ Man, B.Y.² Liu, M.³ Xue, C.S.⁴ Zhuang, H.Z.⁵ Yang, C.⁶

32
- 25144462707
- A comprehensive review of ZnO materials and devices
- DOI 10.1063/1.1992666, 041301
- zgr, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Moko, J. Appl. Phys. 98, 041301 (2005). 10.1063/1.1992666 (Pubitemid 41348664)
- (2005) Journal of Applied Physics , vol.98 , Issue.4 , pp. 1-103
- Ozgur, U.¹ Alivov, Ya.I.² Liu, C.³ Teke, A.⁴ Reshchikov, M.A.⁵ Dogan, S.⁶ Avrutin, V.⁷ Cho, S.-J.⁸ Morko, H.⁹

33
- 17044414541
- Electrical and optical properties of p-type ZnO
- DOI 10.1088/0268-1242/20/4/007
- D. Look, Semicond. Sci. Technol. 20, S55 (2005). 10.1088/0268-1242/20/4/ 007 (Pubitemid 40496725)
- (2005) Semiconductor Science and Technology , vol.20 , Issue.4
- Look, D.C.¹

34
- 17044426371
- Shallow donors and acceptors in ZnO
- DOI 10.1088/0268-1242/20/4/008
- B. K. Meyer, J. Sann, D. M. Hofmann, C. Neumann, and A. Zeuner, Semicond. Sci. Technol. 20, S62 (2005). 10.1088/0268-1242/20/4/008 (Pubitemid 40496726)
- (2005) Semiconductor Science and Technology , vol.20 , Issue.4
- Meyer, B.K.¹ Sann, J.² Hofmann, D.M.³ Neumann, C.⁴ Zeuner, A.⁵

35
- 33846194582
- Temperature-dependent photoluminescence of quasialigned Al-doped ZnO nanorods
- DOI 10.1063/1.2429906
- H. P. He, H. P. Tang, Z. Z. Ye, L. P. Zhu, B. H. Zhao, L. Wang, and X. H. Li, Appl. Phys. Lett. 90, 023104 (2007). 10.1063/1.2429906 (Pubitemid 46105599)
- (2007) Applied Physics Letters , vol.90 , Issue.2 , pp. 023104
- He, H.P.¹ Tang, H.P.² Ye, Z.Z.³ Zhu, L.P.⁴ Zhao, B.H.⁵ Wang, L.⁶ Li, X.H.⁷

36
- 33749859864
- C. Lee and J. Lim, J. Korean. Phys. Soc. 49, 913 (2006).
- (2006) J. Korean. Phys. Soc. , vol.49 , pp. 913
- Lee, C.¹ Lim, J.²

37
- 36849056999
- Preparation of p-type ZnO films with (N,Ga) co-doping by MOVPE
- DOI 10.1016/j.matchemphys.2007.07.012, PII S0254058407004592
- H. Wang, H. P. Ho, K. C. Lo, and K. W. Cheah, Mater. Chem. Phys. 107, 244 (2008). 10.1016/j.matchemphys.2007.07.012 (Pubitemid 350236413)
- (2008) Materials Chemistry and Physics , vol.107 , Issue.2-3 , pp. 244-247
- Wang, H.¹ Ho, H.P.² Lo, K.C.³ Cheah, K.W.⁴

38
- 79958230334
- 10.1063/1.1504875
- D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002). 10.1063/1.1504875
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1830
- Look, D.C.¹ Reynolds, D.C.² Litton, C.W.³ Jones, R.L.⁴ Eason, D.B.⁵ Cantwell, G.⁶

39
- 1942489249
- 10.1063/1.1650899
- F. Reuss, C. Kirchner, Th. Gruber, R. Kling, S. Maschek, W. Limmer, A. Wang, and P. Ziemann, J. Appl. Phys. 95, 3385 (2004). 10.1063/1.1650899
- (2004) J. Appl. Phys. , vol.95 , pp. 3385
- Reuss, F.¹ Kirchner, C.² Gruber, Th.³ Kling, R.⁴ Maschek, S.⁵ Limmer, W.⁶ Wang, A.⁷ Ziemann, P.⁸

40
- 12444303205
- Excitonic fine structure and recombination dynamics in single-crystalline ZnO
- DOI 10.1103/PhysRevB.70.195207, 195207
- A. Teke,. zgr, S. Dogan, X. Gu, H. Moko, B. Nemeth, J. Nause, and H. O. Everitt, Phys. Rev. B 70, 195207 (2004). 10.1103/PhysRevB.70.195207 (Pubitemid 40142683)
- (2004) Physical Review B - Condensed Matter and Materials Physics , vol.70 , Issue.19 , pp. 1-10
- Teke, A.¹ Ozgur, U.² Dogan, S.³ Gu, X.⁴ Morkoc, H.⁵ Nemeth, B.⁶ Nause, J.⁷ Everitt, H.O.⁸

41
- 0043004198
- 10.1063/1.368564
- A. K. Viswanath, J. I. Lee, S. Yu, D. Kim, Y. Choi, and C. H. Hong, J. Appl. Phys. 84, 2848 (1998). 10.1063/1.368564
- (1998) J. Appl. Phys. , vol.84 , pp. 2848
- Viswanath, A.K.¹ Lee, J.I.² Yu, S.³ Kim, D.⁴ Choi, Y.⁵ Hong, C.H.⁶

42
- 35948983314
- 10.1103/PhysRevB.76.193303
- E. Przedziecka, E. Kamiska, I. Pasternak, A. Piotrowska, and J. Kossut, Phys. Rev. B 76, 193303 (2007). 10.1103/PhysRevB.76.193303
- (2007) Phys. Rev. B , vol.76 , pp. 193303
- Przedziecka, E.¹ Kamiska, E.² Pasternak, I.³ Piotrowska, A.⁴ Kossut, J.⁵

43
- 0001512375
- 10.1103/PhysRevLett.4.361
- J. R. Haynes, Phys. Rev. Lett. 4, 361 (1960). 10.1103/PhysRevLett.4.361
- (1960) Phys. Rev. Lett. , vol.4 , pp. 361
- Haynes, J.R.¹

44
- 0001104396
- 10.1103/PhysRevB.38.9746
- J. Gutowski, N. Presser, and I. Broser, Phys. Rev. B 38, 9746 (1988). 10.1103/PhysRevB.38.9746
- (1988) Phys. Rev. B , vol.38 , pp. 9746
- Gutowski, J.¹ Presser, N.² Broser, I.³

45
- 0042842374
- 10.1063/1.1590423
- Y. R. Ryu, T. S. Lee, and H. W. White, Appl. Phys. Lett. 83, 87 (2003). 10.1063/1.1590423
- (2003) Appl. Phys. Lett. , vol.83 , pp. 87
- Ryu, Y.R.¹ Lee, T.S.² White, H.W.³

46
- 34250155334
- Improved p-type conductivity and acceptor states in N-doped ZnO thin films
- DOI 10.1088/0022-3727/40/10/022, PII S0022372707425888, 022
- J. G. Lu, Q. Liang, Y. Zhang, Z. Ye, and S. Fujita, J. Phys. D: Appl. Phys. 40, 3177 (2007). 10.1088/0022-3727/40/10/022 (Pubitemid 46894052)
- (2007) Journal of Physics D: Applied Physics , vol.40 , Issue.10 , pp. 3177-3181
- Lu, J.¹ Liang, Q.² Zhang, Y.³ Ye, Z.⁴ Fujita, S.⁵

47
- 39649111520
- 10.1016/j.jcrysgro.2007.12.038
- X. H. Pan, Z. Z. Ye, J. Y. Huang, Y. J. Zeng, H. P. He, X. Q. Gu, L. P. Zhu, and B. H. Zhao, J. Cryst. Growth 310, 1029 (2008). 10.1016/j.jcrysgro.2007. 12.038
- (2008) J. Cryst. Growth , vol.310 , pp. 1029
- Pan, X.H.¹ Ye, Z.Z.² Huang, J.Y.³ Zeng, Y.J.⁴ He, H.P.⁵ Gu, X.Q.⁶ Zhu, L.P.⁷ Zhao, B.H.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.