High temperature dehydrogenation for realization of nitrogen-doped p-type ZnO

Journal of Crystal Growth

Volumn 310, Issue 15, 2008, Pages 3448-3452

  Liu, W ^a   Gu, S L ^a   Ye, J D ^a   Zhu, S M ^a   Wu, Y X ^a   Shan, Z P ^a   Zhang, R ^a   Zheng, Y D ^a   Choy, S F ^b   Lo, G Q ^b   Sun, X W ^c  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

A1. Dehydrogenation; A1. N doping; A3. MOCVD; B1. ZnO

Indexed keywords

HOLE CONCENTRATION; NITROGEN; NONMETALS; SEMICONDUCTING ZINC COMPOUNDS; ZINC ALLOYS;

CONCENTRATION (COMPOSITION); DOPING MECHANISM; HIGH TEMPERATURE (HT); IN-SITU; NITROGEN DOPING; NITROGEN-DOPED; P TYPE ZNO; P-TYPE ZNO FILMS;

ZINC OXIDE;

EID: 46749151290     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.03.044     Document Type: Article

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