Effect of post-annealing on microstructural and electrical properties of N+ ion-implanted into ZnO:In films

Chinese Physics Letters

Volumn 25, Issue 3, 2008, Pages 1128-1130

  Kong, Chun Yang ^a   Qin, Guo Ping ^a   Ruan, Hai Bo ^a   Nan, Mao ^a   Zhu, Ren Jiang ^a   Dai, Te Li ^a  

^a CHONGQING NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONDUCTIVE FILMS; HALL MOBILITY; HOLE CONCENTRATION; HOLE MOBILITY; II-VI SEMICONDUCTORS; ION IMPLANTATION; MAGNETRON SPUTTERING; OPTICAL FILMS; SUBSTRATES; THIN FILMS; ZINC OXIDE;

CO-DOPING; ION IMPLANTED; MICRO-STRUCTURAL; P-TYPE CONDUCTIVE; POSTANNEALING; QUARTZ GLASS SUBSTRATES; RADIO-FREQUENCY-MAGNETRON SPUTTERING; SPUTTERING TECHNIQUES; ZNO FILMS; ZNO THIN FILM;

METALLIC FILMS;

EID: 41149119003     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/3/087     Document Type: Article

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