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Volumn 98, Issue 25, 2011, Pages

Electroluminescence emission from light-emitting diode of p-ZnO /(InGaN/GaN) multiquantum well/ n-GaN

(7) Park, Tae Young a Choi, Yong Seok a Kim, Sang Mook a Jung, Gun Young a Park, Seong Ju a Kwon, Bong Joon b Cho, Yong Hoon b

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; ELECTROLUMINESCENCE EMISSION; INGAN/GAN; INJECTION CURRENTS; MULTIQUANTUM WELLS; RED-SHIFTED; SB-DOPED; THERMAL-ANNEALING;

ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 79959597228 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3601915 Document Type: Article

Times cited : (41)

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