Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient

Chemical Physics Letters

Volumn 460, Issue 4-6, 2008, Pages 548-551

  Sun, J C ^a   Liang, H W ^a   Zhao, J Z ^a   Bian, J M ^a   Feng, Q J ^a   Hu, L Z ^a   Zhang, H Q ^a   Liang, X P ^a   Luo, Y M ^a   Du, G T ^a,b  

^a Institute of Advanced Science and Technology   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; HOLE CONCENTRATION; ION BEAM ASSISTED DEPOSITION; LIGHT; LIGHT EMISSION; METALLIZING; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

CONCENTRATION (COMPOSITION); HOMO JUNCTIONS; LIGHT EMITTING DEVICES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); P TYPE ZNO; SAPPHIRE SUBSTRATES; ULTRAVIOLET ELECTROLUMINESCENCE;

ZINC ALLOYS;

EID: 47249108458     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2008.06.039     Document Type: Article

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