Effects of processing parameters on electrical properties of p-type li-doped ZnO films by DC pulsed sputtering

Journal of the American Ceramic Society

Volumn 94, Issue 11, 2011, Pages 3711-3715

  Chiu, Kuo Chuang ^a,b   Jean, Jau Ho ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER GAS; CRYSTALLINITIES; ELECTRICAL RESISTIVITY; GLASS SUBSTRATES; GRAIN SIZE; P-TYPE; PROCESSING PARAMETERS; PULSED SPUTTERING; SPUTTERING POWER; STICKING EFFICIENCIES; SUBSTRATE TEMPERATURE; ZNO FILMS;

DC POWER TRANSMISSION; ELECTRIC CONDUCTIVITY; SUBSTRATES; ZINC OXIDE;

METALLIC FILMS;

EID: 80155179999     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2011.04624.x     Document Type: Article

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