High quality p-type Ag-doped ZnO thin films achieved under elevated growth temperatures

Journal of Physics Condensed Matter

Volumn 24, Issue 14, 2012, Pages

  Myers, Michelle A ^a   Lee, Joon Hwan ^b   Bi, Zhenxing ^a   Wang, Haiyan ^a,b  

^a Texas AandM University   (United States)

^b TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION PARAMETERS; DESIGNED CONDITIONS; HALL MEASUREMENTS; HIGH QUALITY; LASER ENERGIES; MICROSTRUCTURAL PROPERTIES; OXYGEN PRESSURE; P-TYPE; P-TYPE CONDUCTIVITY; PARTIAL OXYGEN PRESSURES; SUBSTRATE TEMPERATURE; VARIOUS SUBSTRATES; ZNO FILMS; ZNO THIN FILM;

ELECTRIC PROPERTIES; ELECTRON MICROSCOPY; HOLE MOBILITY; METALLIC FILMS; PULSED LASER DEPOSITION; SAPPHIRE;

SUBSTRATES;

ALUMINUM OXIDE; SILVER; ZINC OXIDE;

ARTICLE; CHEMISTRY; LASER; NANOTECHNOLOGY; SURFACE PROPERTY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ALUMINUM OXIDE; LASERS; MICROSCOPY, ELECTRON, TRANSMISSION; NANOTECHNOLOGY; SILVER; SURFACE PROPERTIES; TEMPERATURE; X-RAY DIFFRACTION; ZINC OXIDE;

EID: 84863358387     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/14/145802     Document Type: Article

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