Investigations on the structural and optical properties of Li, N and (Li, N) co-doped ZnO thin films prepared by sol-gel technique

Materials Science in Semiconductor Processing

Volumn 13, Issue 1, 2010, Pages 46-50

  Ravichandran, C ^a,b   Srinivasan, G ^a   Lennon, Craig ^c   Sivanathan, S ^c   Kumar, J ^a  

^a ANNA UNIVERSITY   (India)

^b Dhanalakshmi College of Engineering   (India)

^c UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

Photoluminescence; Sol gel method; XPS; Zinc oxide

Indexed keywords

BROAD BANDS; CO-DOPED ZNO; DEEP LEVEL EMISSION; DEPOSITED FILMS; DOPED SAMPLE; DOPED ZINC OXIDE THIN FILMS; EMISSION BANDS; NEAR BAND EDGE; P-TYPE BEHAVIORS; P-TYPE CONDUCTION; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SAPPHIRE SUBSTRATES; SOL-GEL METHODS; SOL-GEL TECHNIQUE; STRUCTURAL AND OPTICAL PROPERTIES; ULTRAVIOLET EMISSION; X RAY PHOTOELECTRON SPECTRA; XPS; ZNO;

HOLOGRAPHIC INTERFEROMETRY; OPTICAL PROPERTIES; OXIDE FILMS; PHOTOLUMINESCENCE; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC COATINGS; ZINC OXIDE;

GELS;

EID: 77953321173     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2010.02.006     Document Type: Article

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