Fabrication of p-type ZnMgO codoped with Al and N using dc reactive magnetron sputtering

Applied Surface Science

Volumn 253, Issue 4, 2006, Pages 2345-2347

  Ye, Y M ^a   Ye, Z Z ^a   Chen, L L ^a   Zhao, B H ^a   Zhu, L P ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

dc reactive magnetron sputtering; Doping; p Type conduction; Semiconducting II VI materials; ZnMgO

Indexed keywords

ALUMINUM; ELECTRIC CONDUCTANCE; ELECTRONIC PROPERTIES; FABRICATION; FILM GROWTH; HALL EFFECT; MAGNETRON SPUTTERING; MOLECULAR ORIENTATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION;

BAND GAP; HOLE CONCENTRATION; REACTIVE MAGNETRON SPUTTERING; TRANSMITTANCE SPECTRUM;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 33751209773     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.04.039     Document Type: Article

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