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Volumn 106, Issue 7, 2009, Pages

Arsenic doped p -type zinc oxide films grown by radio frequency magnetron sputtering

(13) Fan, J C a Zhu, C Y a Fung, S a Zhong, Y C b Wong, K S b Xie, Z c Brauer, G d Anwand, W d Skorupa, W d To, C K a Yang, B a Beling, C D a Ling, C C a

a UNIVERSITY OF HONG KONG (Hong Kong)

b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

c HUNAN UNIVERSITY (China)

d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPED ZNO; LOW TEMPERATURE PHOTOLUMINESCENCE; P-TYPE; P-TYPE ZINC OXIDE; RADIO FREQUENCY MAGNETRON SPUTTERING; RADIO FREQUENCY MAGNETRON SPUTTERING METHOD; SECONDARY ION MASS SPECTROSCOPY; SUBSTRATE TEMPERATURE; THERMAL STUDY; XPS; ZNO FILMS;

ARSENIC; HOLE CONCENTRATION; HOLE MOBILITY; MAGNETRONS; METALLIC FILMS; OXIDE FILMS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; RADIO; RADIO WAVES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70350118030 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3236578 Document Type: Article

Times cited : (44)

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