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Applied Physics Letters

Volumn 84, Issue 18, 2004, Pages 3474-3476

p-type behavior in phosphorus-doped (Zn,Mg)O device structures

(5) Heo, Y W a Kwon, Y W a Li, Y a Pearton, S J a Norton, D P a

a J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTICS; IONIZED DOPANT DENSITY; PHOTONIC DEVICES; WIDE BAND-GAP INSULATORS;

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ENERGY GAP; HALL EFFECT; HETEROJUNCTIONS; MIS DEVICES; PHOSPHORUS; POLARIZATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DIODES; THIN FILMS;

ZINC COMPOUNDS;

EID: 2542468686 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1737795 Document Type: Article

Times cited : (224)

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