Fabrication and properties of B-N codoped p-type ZnO thin films

Journal of Physics D: Applied Physics

Volumn 42, Issue 6, 2009, Pages

  Sui, Y R ^a,b   Yao, B ^a,c   Hua, Z ^b   Xing, G Z ^a,d   Huang, X M ^a   Yang, T ^a   Gao, L L ^a   Zhao, T T ^a   Pan, H L ^a   Zhu, H ^c   Liu, W W ^c   Wu, T ^d  

^a JILIN UNIVERSITY   (China)

^b JILIN NORMAL UNIVERSITY   (China)

^c CHANGCHUN INSTITUTE OF OPTICS   (China)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HETEROJUNCTIONS; METALLIC FILMS; OXIDE MINERALS; QUARTZ; SEMICONDUCTOR DIODES; ZINC; ZINC OXIDE;

ACCEPTOR LEVELS; CO-DOPED; CO-DOPED ZNO; DONOR-ACCEPTOR PAIRS; ELECTRICAL PROPERTIES; HOMO JUNCTIONS; LOW-TEMPERATURE PHOTOLUMINESCENCES; N-DOPED; P -TYPE CONDUCTIVITIES; P TYPES; P-N DIODES; P-TYPE ZNO; P-TYPE ZNO LAYERS; P-TYPE ZNO THIN FILMS; POST-ANNEALING; ROOM-TEMPERATURE RESISTIVITIES; ZNO; ZNO LAYERS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 63649104768     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/6/065101     Document Type: Article

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