Fabrication of As-doped p-type ZnO thin films using As 2 O 3 as doping source material by E-beam evaporation

Applied Surface Science

Volumn 255, Issue 5 PART 1, 2008, Pages 2173-2175

  Kumar, Manoj ^a   Choi, Se Young ^a  

^a Yonsei University   (South Korea)

Author keywords

Arsenic doping; E beam evaporation; Thermal treatment; ZnO

Indexed keywords

ARGON; EVAPORATION; FILM PREPARATION; HEAT TREATMENT; HOLE CONCENTRATION; HOLE MOBILITY; II-VI SEMICONDUCTORS; SEMICONDUCTOR DOPING; SUBSTRATES; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

ARSENIC DOPING; DONOR-ACCEPTOR PAIRS; E BEAM EVAPORATION; GLASS SUBSTRATES; HALL MEASUREMENTS; LOW TEMPERATURE PHOTOLUMINESCENCE; NEUTRAL ACCEPTOR BOUND EXCITONS; P TYPE ZNO THIN FILM;

THIN FILMS;

EID: 56949085864     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.07.054     Document Type: Article

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